IRFL9014(2014) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
IRFL9014 Datasheet PDF : 8 Pages
| |||
www.vishay.com
IRFL9014, SiHFL9014
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
(PCB Mount) a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
MAX.
60
40
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = -60 V, VGS = 0 V
VDS = -48 V, VGS = 0 V, TJ = 125 °C
VGS = -10 V
ID = 1.1 A b
VDS = - 25 V, ID = 1.1 A b
-60
-
-
V
-
-0.059 -
V/°C
-2.0
-
-4.0
V
-
-
± 100 nA
-
-
- 100
μA
-
-
-500
-
-
0.50
1.3
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
LS
Drain-Source Body Diode Characteristics
VGS = 0 V,
-
VDS = 25 V,
-
f = 1.0 MHz, see fig. 5
-
-
VGS = - 10 V
ID = - 6.7 A, VDS = - 48 V,
see fig. 6 and 13 b
-
-
-
VDD = - 30 V, ID = - 6.7 A,
-
Rg = 24 , RD = 4.0 , see fig. 10 b
-
-
Between lead,
6 mm (0.25") from
D
-
package and center of
G
die contact
-
S
270
-
170
-
pF
31
-
-
12
-
3.8
nC
-
5.1
11
-
63
-
ns
9.6
-
31
-
4.0
-
nH
6.0
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Current a
integral reverse
ISM
p - n junction diode
D
G
S
-
-
- 1.8
A
-
-
- 14
Body Diode Voltage
VSD
TJ = 25 °C, IS = - 1.8 A, VGS = 0 V b
-
-
- 5.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
TJ = 25 °C, IF = - 6.7 A, dI/dt = 100 A/μs b
80
160
ns
Qrr
-
0.096 0.19 μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
S14-1686-Rev. F, 18-Aug-14
2
Document Number: 91195
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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