V3036S View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
V3036S Datasheet PDF : 8 Pages
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Typical Performance Curves (Continued)
1600
FREQUENCY = 1 MHz
1200
800
CIES
CRES
400
COES
0
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 13. Capacitance vs Collector to Emitter
Voltage
8
IG(REF) = 1mA, RL = 1.25Ω, TJ = 25°C
7
6
5
VCE = 12V
4
3
2
VCE = 6V
1
0
0
4
8
12 16 20 24 28 32
QG, GATE CHARGE (nC)
Figure 14. Gate Charge
375
ICER = 10mA
370
365
360
355
350
345
340
335
10
100
TJ = - 40°C
TJ = 25°C
TJ = 175°C
1K
10K
RG, SERIES GATE RESISTANCE (Ω)
Figure 15. Breakdown Voltage vs Series Gate Resistance
100
0.5
0.2
0.1
10-1 0.05
0.02
t1
PD
t2
0.01
SINGLE PULSE
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-2
10-5
10-4
10-3
10-2
10-1
100
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
©2004 Fairchild Semiconductor Corporation
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C3, October 2004
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