Dynamically Adjustable 6-Bit VID
Step-Down Controller
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 1, V+ = 15V, SHDN = SKIP = VDD = VCC = +5V, VOUT = 1.25V, TA = 0°C to +85°C, unless otherwise noted. Typical
values are at TA = +25°C.)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Minimum Off-Time (Note 2)
tOFF(MIN)
TON = VCC, open, or REF (200kHz, 300kHz,
or 550kHz)
TON = GND (1000kHz)
400 500
ns
300 375
BIAS AND REFERENCE
Quiescent Supply Current (VCC)
Quiescent Supply Current (VDD)
ICC FB forced above their regulation points
IDD FB forced above their regulation points
700 1200
µA
<1
5
µA
Quiescent Battery Supply
Current (V+)
I+
25
40
µA
Shutdown Supply Current (VCC)
Shutdown Supply Current (VDD)
ICC
SHDN = GND
IDD
SHDN = GND
10
25
µA
<1
5
µA
Shutdown Battery Supply
Current (V+)
I+
SHDN = GND, VCC = VDD = 0V or 5V
<1
5
µA
Reference Voltage
Reference Load Regulation
REF Sink Current
VREF
VCC = 4.5V to 5.5V,
IREF = 0
TA = +25°C to +85°C
TA = 0°C to +85°C
1.985
1.98
2.00
2.00
2.015
2.02
V
∆VREF IREF = 0 to 50µA
0.01
V
REF in regulation
10
µA
FAULT DETECTION
VCC Undervoltage-Lockout
Threshold
Rising edge, hysteresis = 20mV, PWM
disabled below this level
4.1
4.4
V
Output Overvoltage Trip
Threshold
2.20 2.25 2.30
V
Output Overvoltage Fault-
Propagation Delay
tOVP FB forced 2% above regulation
10
µs
Output Undervoltage-Protection
Trip Threshold
With respect to unloaded output voltage
65
70
75
%
Output Undervoltage Fault-
Propagation Delay
tUVP FB forced 2% below trip threshold
10
µs
PGOOD Transition Blanking Time
PGOOD Lower Trip Threshold
After X = Y, clock speed set by RTIME
8
clk
Measured at FB with respect to unloaded
output voltage, hysteresis = 1%
-17
-15
-13
%
PGOOD Upper Trip Threshold
Measured at FB with respect to unloaded
output voltage, hysteresis = 1%
+13 +15 +17
%
PGOOD Propagation Delay
PGOOD Output Low Voltage
PGOOD Leakage Current
Thermal-Shutdown Threshold
CURRENT LIMIT
ILIM Adjustment Range
tPGOOD
IPGOOD
TSHDN
Falling edge, 50mV overdrive
ISINK = 4mA
High state, PGOOD forced to 5.5V
Hysteresis = 10°C
10
µs
0.4
V
1
µA
+150
°C
0.5
VREF
V
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