MBR2515L View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
MBR2515L Datasheet PDF : 4 Pages
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MBR2515L
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TC = 91°C per Device)
Peak Repetitive Forward Current, per Leg (Square Wave, 20 kHz, TC = 95°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
VRRM
15
V
VRWM
VR
IF(AV)
A
25
IFRM
25
A
IFSM
150
A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
IRRM
1.0
A
Storage Temperature Range
Tstg
−65 to +125
°C
Operating Junction Temperature
TJ
−65 to +100
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
Conditions
Min. Pad
Min. Pad
Symbol
RqJC
RqJA
Max
1.0
70
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Instantaneous Forward Voltage (Note 1)
(iF = 25 Amps, Tj = 25°C)
(iF = 25 Amps, Tj = 70°C)
(iF = 19 Amps, Tj = 70°C)
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, Tj = 25°C)
(Rated dc Voltage, Tj = 70°C)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Symbol
Min
Typical
Max
Unit
vF
V
−
0.41
0.45
−
0.37
0.42
−
0.34
0.38
iR
−
1.0
−
24
mA
15
200
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