DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MJ10015 View Datasheet(PDF) - ON Semiconductor

Part Name
Description
Manufacturer
MJ10015 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MJ10015 MJ10016
The Safe Operating Area figures shown in Figures 7 and 8 are
specified ratings for these devices under the test conditions
shown.
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
1.0
10 µs
dc MJ10015
MJ10016
TC = 25°C
BONDING WIRE LIMIT
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
2.0 5.0 10 20
50 100 200 500 1000
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Forward Bias Safe Operating Area
50
40 TURN-OFF LOAD LINE
BOUNDARY FOR MJ10016
THE LOCUS FOR MJ10015
30 IS 100 V LESS
20
IIBC1ā uā 10
10 VBE(off) = 5.0 V
TC = 25°C
0
0
100
200
300
400
500
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. Reverse Bias Switching Safe
Operating Area
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two Iimitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 7 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC 25_C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 7 may be found at
any case temperature by using the appropriate curve on
Figure 9.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current condition allowable
during reverse biased turn–off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 8 gives the complete RBSOA
characteristics.
100
80
60
40
20
0
0
FORWARD BIAS
SECOND BREAKDOWN
DERATING
THERMAL
DERATING
40
80
120
160
200
TC, CASE TEMPERATURE (°C)
Figure 9. Power Derating
10
9
8
7
6
5
IC = 20 A
4
3
2
SEE TABLE 1 FOR CONDITIONS,
1 FIGURE 6 FOR WAVESHAPE.
0
0
1
2
3
4
5
6
7
8
VBE(off), REVERSE BASE VOLTAGE (VOLTS)
Figure 10. Typical Reverse Base Current
versus VBE(off) With No External Base
Resistance
http://onsemi.com
5

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]