MJ2501 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
MJ2501 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Darlingtion Power Transistor
isc Product Specification
MJ2501
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB=B -20mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -50mA
VBE(on) Base-Emitter On voltage
IC= -5A ; VCE= -3V
ICEO
Collector Cutoff current
ICER
Collector Cutoff current
IEBO
Emitter Cut-off current
VCE= -40V; IB=B 0
VCE= -80V; RBE= 1.0kΩ
VCE= -80V; RBE= 1.0kΩ, TC=150℃
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -5A ; VCE= -3V
MIN MAX UNIT
-80
V
-2.0
V
-4.0
V
-3.0
V
-1.0
mA
-1.0
-5.0
mA
-2.0
mA
1000
isc Website：www.iscsemi.cn
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