MJD117 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
MJD117 Datasheet PDF : 10 Pages
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MJD112, MJD117
2
Electrical characteristics
Electrical characteristics
Note:
Tcase = 25 °C; unless otherwise specified.
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICEV
Collector cut-off current
(VBE = -1.5 V)
VCE = 80 V
VCE = 80 V, Tc = 125 °C
-
ICBO
Collector cut-off current
(IE = 0)
VCB = 80 V
VCB = 100 V
-
Collector cut-off current
ICEO
(IB = 0)
VCE = 50 V
-
Emitter cut-off current
IEBO
(IC = 0)
VEB = 5 V
-
VCEO(sus)(1)
Collector-emitter
sustaining voltage (IB = 0)
IC = 30 mA
100 -
VCE(sat)(1)
Collector-emitter saturation IC = 2 A
voltage
IC = 4 A
IB = 8 mA
IB = 40 mA
-
-
VBE(sat)(1)
Base-emitter saturation
voltage
IC = 4 A
IB = 40 mA
-
10 µA
0.5 mA
10
µA
20
20 µA
2 mA
V
2
V
3
4
V
VBE(on) Base-emitter on voltage IC = 2 A
VCE = 3 V
-
2.8 V
hFE(1)
DC current gain
IC = 0.5 A_ _ VCE = 3 V 500
-
IC = 2 A_
VCE = 3 V 1000 - 12000
IC = 4 A_ _ VCE = 3 V 200
-
fT
Transition frequency
IC = 0.75 A_ VCE = 10 V
f = 1 MHz
25
-
MHz
CCBO
Collector base capacitance
(IE = 0)
VCB = 10 V
for MJD112
for MJD117
f = 0.1 MHz
-
100 pF
200 pF
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
For PNP types voltage and current values are negative.
Doc ID 3540 Rev 3
3/10
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