MMBT4403LT1 View Datasheet(PDF) - Willas Electronic Corp.
Part Name
Description
Manufacturer
MMBT4403LT1 Datasheet PDF : 6 Pages
| |||
WILLAS
FM120-M+
MMBT4403LTTH1RU
1.0AGSUeRnFAeCrEaMlOPUNuTrSpCHoOsTTeKYTBrAaRnRIsERisREtCoTrIFsIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• BPatNchPprSocieliscsodensign, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
o•ptRimoHizSe bporoadrudcstpfoarcep.acking code suffix "G"
• LowHaploowgeenr lforeses,phriogdhuecftffiocirepnaccyk. ing code suffix "H"
• High current capability, low forward voltage drop.
●
• High surge capability.
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
O•RGDuEaRrdINrinGgIfNoFr oOvReMrvAolTtaIOgeNprotection.
• Ultra high-speed switching.
• SilDiceovniceepitaxial planMaarrckhinipg, metal siliconShjuipnpcitniogn.
• Lead-free parts meet environmental standards of
MMMILB-ST4T4D0-31L9T5100 /228 2T
3000/Tape & Reel
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.071(1.8)
0.056(1.4)
SOT– 23
MMAeXIcMhUaMnRiAcTaINlGdSata
• Epoxy : UL9R4a-tVin0grated flame retardant
Symbol
Value Unit
0.040(1.0)
0.024(0.6)
• CCaoslleec:toMr–oEldmeidtteprlaVsotltiacg, eSOD-123H
V CEO
•
Collector–Base Voltage
Terminals :Plated terminals,
solderable
per
M
I
L
V-SCTBDO
-
7
5
,
0
Emitter–Base Voltage
Method 2026
V EBO
Collector Current — Continuous
IC
• Polarity : Indicated by cathode band
– 40
– 40
– 5.0
– 600
Vdc
0.031(0.8) Typ.
Vdc
Vdc
0.031(0.8) Typ.
3
COLLECTOR
mAdc
Dimensions in inches a1nd (millimeters)
T•HMEoRuMntAinLg CPHosAitRioAnC: TAEnyRISTICS
• Weight : ApCphroaxraimctaetreisdti0c.011 gram
Symbol
Max
Unit
BASE
2
Total DMevAicXe IDMisUsipMatiRonAFTRIN–5GBSoaArdN(1D) ELECTRPICD AL CHAR2A25CTERISTmICWS
EMITTER
T A =25 °C
Ratings at D25e℃rateaambboiveent2t5e°mCperature unless otherwise specified.
1.8
mW/°C
Single phase half wave, 60Hz, resistive of inductive load.
For capacTithiveermloaaldR, edseisratatencceurJruenncttbioyn2to0%Ambient
R θJA
556
°C/W
Total Device Dissipation
PD
300
mW
Alumina SubRstAraTtIeN(G2S) T A = 25°C
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking CoDdeerate above 25°C
12
13 2.4 14 mW1/5°C
16
18
10
115 120
Maximum RTehceurrmreanltRPeesaisktRanecvee,rsJeunVcotlitoangeto Ambient
VRRM
R
20
θJA
30 417 40 °C5/W0
60
80
100
150
200 Volts
Maximum RJMunSctVioonltaagned Storage Temperature
VRMS T J , T14stg
–2515 to +15028
°3C5
42
56
70
105
140 Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 Volts
MaximuDmEAVveICraEgeMFAorRwKarIdNRGectified Current
IO
1.0
Amps
Peak ForwaMrdMSuBrTge44C0u3rrLeTn1t 8=.32mTs single half sine-wave IFSM
superimposed on rated load (JEDEC method)
Typical EThLeErmCaTl RReICsiAstLanCceH(ANoRteA2C) TERISTICS (T A =R2Θ5J°AC unless otherwise noted)
Typical Junction Capacitance (NoteC1h) aracteristic
CJ
Symbol
OperatinOgFTFemCpHeAraRtuAreCRTaEngReISTICS
TJ
-55 to +125
30
40
Min 120Max
Unit
-55 to +150
Amps
℃/W
PF
℃
Storage TempCeorallteucretoRr–aEnmgeitter Breakdown Voltage (3)TSTG
V (BR)CEO
- 65 to +175 Vdc
℃
(I C = –1.0 mAdc, I B = 0)
– 40
—
CollecCtoHr–ABRaAsCeTBErReIaSkTdIoCwSn Voltage
Maximum Forw(IaCr=d V–0o.lt1amgeAadtc1, .I0EA=D0C)
SYMBOL FM120-MH FM130-MVH F(BMR)1C4B0O-MH FM150-MH FM160-MH FM180-MHVFdMc1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50
–04.700
— 0.85
0.9
0.92 Volts
Maximum AveEramgietteRre–vBearse CBurerraekndtoawt n@VoTlAta=g2e5℃
IR
Rated DC Blo(cIkEin=g–V0o.l1tamgAedc, I C = 0) @T A=125℃
V (BR)EBO
0.5
Vdc
– 5.0 10 —
mAmp
Base Cutoff Current
NOTES:
(V CE = –35 Vdc, V EB = –0.4 Vdc)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Collector Cutoff Current
2- Thermal Res(iVstaCnEc=e –F3ro5mVJducn,ctVionEBto= A–m0.b4ieVntdc)
I BEV
µAdc
—
– 0.1
I CEX
µAdc
—
– 0.1
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%.
201220-1112-06
WILWLAILSLEALSEECLTERCOTRNOICNICCOCROPR.P.
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