MMBT5401L-A-AE3-R(2011) View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
MMBT5401L-A-AE3-R Datasheet PDF : 4 Pages
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MMBT5401
PNP SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (TA = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector -Base Voltage
VCBO
-160
V
Collector -Emitter Voltage
VCEO
-150
V
Emitter -Base Voltage
VEBO
-5
V
DC Collector Current
IC
-600
mA
Power Dissipation
PD
350
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BVCBO IC=-100μA, IE=0
Collector-Emitter Breakdown Voltage BVCEO IC=-1mA, IB=0
Emitter-Base Breakdown Voltage
BVEBO IE=-10μA, IC=0
Collector Cut-off Current
ICBO VCB=-120V, IE=0
Emitter Cut-off Current
IEBO VBE=-3V, IC=0
DC Current Gain(Note)
VCE=-5V, IC=-1mA
hFE VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
Base-Emitter Saturation Voltage
VBE(SAT)
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
Current Gain Bandwidth Product
fT VCE=-10V, IC=-10mA, f=100MHz
Output Capacitance
COB VCB=-10V, IE=0, f=1MHz
Noise Figure
NF
Note: Pulse test: PW<300μs, Duty Cycle<2%
IC=-0.25mA, VCE=-5V
RS=1kΩ, f=10Hz ~ 15.7kHz
CLASSIFICATION OF hFE
MIN
-160
-150
-5
80
100
TYP MAX UNIT
V
V
V
-50 nA
-50 nA
160 400
-0.2
V
-0.5
-1
V
-1
300 MHz
6.0 pF
8
dB
RANK
RANGE
A
80-170
B
150-240
C
200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-011.G
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