MPS8599
Characteristics (TA=25 oC)
DC Current Gain
at -VCE=5V, -IC=1mA
at -VCE=5V, -IC=10mA
at -VCE=5V, -IC=100mA
Collector Saturation Voltage
at -IC=100mA, -IB=5mA
at -IC=100mA, -IB=10mA
Base Emitter On Voltage
at -VCE=5V, -IC=10mA
Collector-Emitter Breakdown Voltage
at -IC=10mA
Collector-Base Breakdown Voltage
at -IC=100μA
Emitter-Base Breakdown Voltage
at -IE=10μA
Collector Cutoff Current
at -VCE=60V
Collector Cutoff Current
at -VCB=80V
Emitter Cutoff Current
at -VEB=4V
Current-Gain-Bandwidth Product
at -VCE=5V, -IC=10mA, f=100MHz
Output Capacitance
at -VCB=5V, f=1MHz
Input Capacitance
at -VEB=0.5V, f=1MHz
Notes: Pulse test: Pulse width≦300μs, Duty cycle=2%.
Symbol Min. Typ. Max. Unit
hFE
100
-
300
-
hFE
100
-
-
-
hFE
75
-
-
-
-VCEsat
-
-VCEsat
-
-
0.4
V
-
0.3
V
-VBE(on)
0.6
-
0.8
V
-V(BR)CEO
80
-
-
V
-V(BR)CBO
80
-
-
V
-V(BR)EBO
5
-
-
V
-ICES
-
-ICBO
-
-
0.1
μA
-
0.1
μA
-IEBO
-
-
0.1
μA
fT
150
-
Cobo
-
-
Cibo
-
-
-
MHz
8
pF
30
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 24/06/2003