OM1N100ST View Datasheet(PDF) - Omnirel Corp => IRF
Part Name
Description
Manufacturer
OM1N100ST Datasheet PDF : 4 Pages
| |||
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
STATIC P/N OM1N100SA (See Note 3)
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
Voltage
VGS(th)
IGSSF
IGSSR
IDSS
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage
Drain Current
ID(on) On-State Drain Current
RDS(on) Static Drain-Source On-State
Resisitance1, 3
RDS(on) Static Drain-Source On-State
Resistance1, 3
1000
V VGS = 0,
ID = 250 mA
2.0
4.0 V VDS = VGS, ID = 250 mA
100 nA VGS = 20 V, VDS = 0
-100 nA VGS = - 20 V, VDS = 0
0.25 mA VDS = Max. Rat., VGS = 0
1.0 mA VDS = 0.8 x Max. Rat.,
VGS = 0, TC = 125° C
1.0
A VDS > ID(on) x RDS(on) Max.
VGS = 10 V
SA 8.0
VGS = 10 V
ST 8.2
ID =.5A
SA 15.0
VGS = 10 V
ST 15.4
ID =.5A, TC = 100° C
DYNAMIC
gfs
Ciss
Coss
Crss
Td(on)
tr
Td(off)
tf
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
1.0
950
110
40
90
90
115
75
S VDS = 10V, ID = 1 A
pF VGS = 0
pF VDS = 25 V
pF f = 1 MHz
ns
ns
ns VDD = 600 V, ID = 3.5
ns RG = 50W, VGS = 10 V
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
Continuous Source Current
(Body Diode)
ISM
Source Current1
(Body Diode)
VSD Diode Forward Voltage2
trr
Reverse Recovery Time
3.5 A Modified MOSPOWER
D
symbol showing
14 A the integral P-N G
Junction rectifier.
S
2.5 V TC = 25 C, IS = 3.5 A, VGS = 0
900
ns IF = IS, VDD = 100 V
dlF/ds = 100 A/ms, TJ = 150 C
1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%.
2 Pulse Width limited by safe operating area.
3 OM1N100ST - All characteristics the same except RDS(on)
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
STATIC P/N OM3N100SA (See Note 3)
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
Voltage
VGS(th)
IGSSF
IGSSR
IDSS
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
ID(on) On-State Drain Current
RDS(on) Static Drain-Source On-State
Resistance1, 3
RDS(on) Static Drain-Source On-State
Resistance1, 3
1000
2.0
3.5
SA
ST
SA
ST
V
4.0 V
100 nA
- 100 nA
0.25 mA
1.0 mA
A
5.2
5.4
10.0
10.4
VGS = 0,
ID = 250 mA
VDS = VGS, ID = 250 mA
VGS = 20 V
VGS = - 20 V
VDS = Max. Rat., VGS = 0
VDS = 0.8 x Max. Rat.,
VGS = 0, TC = 125° C
VDS > ID(on) x RDS(on) Max
VGS = 10 V
VGS = 10 V
ID =.5A
VGS = 10 V
ID =.5A, TC = 100° C
DYNAMIC
gfs
Ciss
Coss
Crss
Td(on)
tr
Td(off)
tf
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
1.0
950
110
40
90
90
115
75
S VDS = 10, ID = 1.5 A
pF VGS = 0
pF VDS = 25 V
pF f = 1 MHz
ns
ns
ns VDD = 600 V, ID = 3.5
ns RG = 50W, VGS = 10 V
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
Continuous Source Current
(Body Diode)
ISM
Source Current1
(Body Diode)
VSD Diode Forward Voltage2
trr
Reverse Recovery Time
3.5 A Modified MOSPOWER
D
symbol showing
14 A the integral P-N G
Junction rectifier.
S
2.5 V TC = 25 C, IS = 3.5 A, VGS = 0
900
ns IF = IS, VDD = 100 V
dlF/ds = 100 A/ms, TJ = 150 C
1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%.
2 Pulse Width limited by safe operating area.
3 OM3N100ST - All characteristics the same except RDS(on)
Share Link: 