PEMB1 View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

PEMB1

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ

Philips Electronics 

Philips Semiconductors

PNP resistor-equipped transistors;

R1 = 22 kΩ, R2 = 22 kΩ

Preliminary specification

PEMB1

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

Per transistor unless otherwise specified

ICBO

collector-base cut-off current

ICEO

collector-emitter cut-off current

IEBO

hFE

VCEsat

Vi(off)

Vi(on)

R1

RR-----21--

Cc

emitter-base cut-off current

DC current gain

collector-emitter saturation

voltage

input off voltage

input on voltage

input resistor

resistor ratio

collector capacitance

CONDITIONS

VCB = −50 V; IC = 0

VCE = −50 V; IB = 0

VCE = −30 V; IB = 0; Tj = 150 °C

VEB = −5 V; IC = 0

VCE = −5 V; IC = −5 mA

IC = −10 mA; IB = −0.5 mA

VCE = −5 V; IC = −100 µA

VCE = −0.3 V; IC = −10 mA

IE = Ie = 0; VCB = −10 V; f = 1 MHz

MIN. TYP. MAX. UNIT

−

−

−

−

−

−

−

−

60

−

−

−

−100 nA

−1

µA

−50 µA

−180 µA

−

−150 mV

−

−1.1 −0.8 V

−2.5 −1.7 −

V

15.4 22

28.6 kΩ

0.8 1

1.2 kΩ

−

−

3

pF

2001 Sep 13

4

Share Link: