NXP Semiconductors
PH9030L
N-channel TrenchMOS logic level FET
10
VGS
(V)
VDS = 12 V
ID = 10 A
Tj = 25 °C
7.5
5
003aab735
104
C
(pF)
103
003aab737
Ciss
2.5
0
0
10
20
30
QG (nC)
102
10−1
1
Coss
Crss
10
102
VDS (V)
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
50
ID
(A)
VDS > ID × RDSon
40
003aab734
80
IS
(A)
60
003aab736
30
20
Tj = 150 °C 25 °C
10
40
Tj = 150 °C
25 °C
20
0
0
1
2
3
4
VGS (V)
0
0
0.3
0.6
0.9
1.2
VSD (V)
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical
values
Fig 14. Source current as a function of
source-drain voltage; typical values
PH9030L_1
Product data sheet
Rev. 01 — 29 July 2008
© NXP B.V. 2008. All rights reserved.
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