PMD16K60 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
PMD16K60 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
PMD16K60/80/100
DESCRIPTION
·With TO-3 package
·High DC current gain
·DARLINGTON
APPLICATIONS
·Designed for use in power switching
application.
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
PMD16K60
VCBO
Collector-base voltage PMD16K80 Open emitter
PMD16K100
PMD16K60
VCEO
Collector-emitter voltage PMD16K80 Open base
PMD16K100
VEBO
Emitter-base voltage
Open collector
IC
Collector current
ICM
Collector current(peak)
IB
Base current
PD
Power dissipation
TC=25℃
Tj
Max. operating Junction temperature
Tstg
Storage temperature
VALUE
60
80
100
60
80
100
5
20
40
0.5
200
200
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
MAX
0.875
UNIT
℃/W
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