RFHA1000S2 View Datasheet(PDF) - RF Micro Devices
Part Name
Description
Manufacturer
RFHA1000S2 Datasheet PDF : 11 Pages
| |||
RFHA1000
50MHz to
1000MHz,
15W GaN
Wideband
Power Ampli-
fier
RFHA1000
50MHz TO 1000MHz, 15W GaN WIDEBAND
POWER AMPLIFIER
Package: AlN Leadless Chip Carrier / SO8
Features
Advanced GaN HEMT Technology
Output Power of 15W
Advanced Heat-Sink Technology
50MHz to 1000MHz
Instantaneous Bandwidth
Input Internally Matched to 50
28V Operation Typical
Performance
Output Power 41.5dBm
Gain 17dB
Power Added Efficiency 60%
-40°C to 85°C Operating
Temperature
Large Signal Models Available
Applications
Class AB Operation for Public
Mobile Radio
Power Amplifier Stage for
Commercial Wireless
Infrastructure
General Purpose Tx Amplification
Test Instrumentation
Civilian and Military Radar
VGS
Pin 1
RF IN
Pin 2,3
RF OUT / VDS
Pin 6,7
GND
BASE
Functional Block Diagram
Product Description
The RFHA1000 is a wideband Power Amplifier designed for CW and pulsed applica-
tions such as wireless infrastructure, RADAR, two way radios and general purpose
amplification. Using an advanced high power density Gallium Nitride (GaN) semi-
conductor process, these high-performance amplifiers achieve high efficiency, flat
gain, and large instantaneous bandwidth in a single amplifier design. The
RFHA1000 is an input matched GaN transistor packaged in an air cavity ceramic
package which provides excellent thermal stability through the use of advanced
heat sink and power dissipation technologies. Ease of integration is accomplished
through the incorporation of optimized input matching network within the package
that provides wideband gain and power performance in a single amplifier. An exter-
nal output match offers the flexibility of further optimizing power and efficiency for
any sub-band within the overall bandwidth.
DS120418
Ordering Information
RFHA1000S2
RFHA1000SB
RFHA1000SQ
RFHA1000SR
RFHA1000TR7
RFHA1000PCBA-410
2-Piece sample bag
5-Piece bag
25-Piece bag
100 Pieces on 7” short reel
750 Pieces on 7” reel
Fully assembled evaluation board 50MHz to 1000MHz;
28V operation
Optimum Technology Matching® Applied
GaAs HBT
SiGe BiCMOS
GaAs pHEMT
GaN HEMT
GaAs MESFET
Si BiCMOS
Si CMOS
BiFET HBT
InGaP HBT
SiGe HBT
Si BJT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
1 of 11
Share Link: 