Small Signal Product
SD103AW thru SD103CW
Taiwan Semiconductor
Low VF SMD Schottky Barrier Diode
FEATURES
- Low power loss, high current capability, low VF
- Surface device type mounting
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Packing code with suffix "G" means
green compound (halogen-free)
SOD-123
MECHANICAL DATA
- Case: SOD-123 small outline plastic package
- Molding compound, UL flammability classification rating 94V-0
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guar
- High temperature soldering guaranteed : 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 0.01 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL SD103AW SD103BW SD103CW
Power Dissipation
PD
400
Repetitive Peak Reverse Voltage
VRRM
40
30
20
Reverse Voltage
VR
28
21
14
Mean Forward Current @ TL = 100°C
IO
350
Repetitive Peak Forward Surge Current
@ t ≦ 1.0 s
IFRM
1.5
Thermal Resistance ( Junction to Ambient )
RθJA
300
Junction Temperature
TJ
125
Storage Temperature Range
TSTG
-65 to +125
UNIT
mW
V
V
mA
A
oC/W
oC
oC
PARAMETER
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
SD103AW IR = 10 μA
SD103BW IR = 10 μA
SD103CW IR = 10 μA
IF = 20 mA
IF = 200 mA
SD103AW VR = 30 V
SD103BW VR = 20 V
SD103CW VR = 10 V
VR = 0 , f = 1.0 MHz
SYMBOL
V(BR)
VF
IR
CJ
MIN
40
30
20
-
-
TYP
-
-
-
50
MAX
-
0.37
0.60
5
Units
V
V
μA
pF
Document Number: DS_S1411004
Version: C14