Si4410DY
0.20
0.03
0.16
0.02
0.12
0.08
VG S = 10V
0.01
VG S = 4.5V
0.04
I D = 10A
0.00
0
A
10
20
30
40
50
ID , D rain Current (A )
0.00
3
A
4
5
6
7
8
9
10
V GS , G ate-to-Sourc e Voltage (V)
Fig 12. Typical On-Resistance Vs. Drain
Current
Fig 13. Typical On-Resistance Vs. Gate
Voltage
3.0
1000
ID
TOP
4.5A
8.0A
800
BOTTOM 10A
2.5
600
ID =250µA
400
2.0
200
1.5
A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Jun ction Temperatu re (°C )
Fig 14. Typical Threshold Voltage Vs.Temperature
6
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 15. Maximum Avalanche Energy
Vs. Drain Current
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