SPD14N05
SPU14N05
Typ. output characteristics
ID = Æ’(VDS)
parameter: tp = 80 µs , Tj = 25 °C
30 Ptot = 35W
A
l
k
j
26
I
24
D
22
20
18
VGS [V]
a 4.0
i b 4.5
c 5.0
h d 5.5
e 6.0
16
g f 6.5
g 7.0
14
f h 7.5
12
i 8.0
10
e j 9.0
k 10.0
8
d l 20.0
6
c
4
2
b
0
a
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
VDS
Typ. drain-source on-resistance
RDS (on) = Æ’(ID)
parameter: tp = 80 µs, Tj = 25 °C
0.32
a
Ω
R
DS (on)
0.24
bc
d
e
f
gh
0.20
0.16
0.12
i
j
0.08
k
0.04 VGS [V] =
abcdef
4.05 5.0 5.5 6.0 6.5 7.0
0.00
0
4
8
12
ghi j k
7.5 8.0 9.0 10.0 20.0
16 20 A 26
ID
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
35
A
I
D
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Semiconductor Group
6
29/Jan/1998