T410 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

T410

4A TRIACS

STMicroelectronics 

T410 / T435

THERMAL RESISTANCES

Symbol

Parameter

Rth (j-a) Junction to ambient

SOT82 / SOT194

TO220AB

ISOWATT 220AB

Rth (j-c) DC Junction to case for DC

SOT82 / SOT194

TO220AB

ISOWATT 220AB

Rth (j-c) AC Junction to case for 360° conduction angle SOT82 / SOT194

( F= 50 Hz)

TO220AB

ISOWATT 220AB

Value

100

60

50

3.5

5.3

2.6

4

Unit

°C/W

°C/W

°C/W

GATE CHARACTERISTICS (maximum values)

PG(AV) = 1 W PGM= 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs) VGM = 16 V (tp = 20 µs).

ELECTRICAL CHARACTERISTICS

Symbol

Test Conditions

IGT

VGT

VGD

tgt

IL

IH *

VTM *

IDRM

IRRM

VD=12V (DC) RL=33Ω

VD=12V (DC) RL=33Ω

VD=VDRM RL=3.3kΩ

VD=VDRM IG = 500mA

dIG/dt = 3A/µs ITM = 5.5A

IG=1.2 IGT

IT= 100mA gate open

ITM= 5.5A tp= 380µs

VDRM Rated

VRRM Rated

dV/dt *

(dI/dt)c *

Linear slope up to

VD=67%VDRM

gate open

dV/dt = 0.1V/µs

dV/dt = 20V/µs

VDRM =

400V / 600V

VDRM =

700V / 800V

Tj=25°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=25°C

Tj=25°C

Tj=25°C

Tj=25°C

Tj=125°C

Tj=125°C

Tj=125°C

Qu adrant

I-II-III

I-II-III

I-II-III

I-II-III

I-II-III

MAX

MAX

MIN

TYP

MAX

MAX

MAX

MAX

MAX

MIN

MIN

MIN

Suffix

T410 T435

10

35

1.5

0.2

2

30

60

15

35

1.75

0.01

2

50

250

30

250

2.7

4.4

1.8

2.7

Unit

mA

V

V

µs

mA

mA

V

mA

V/µs

A/ms

* For either polarity of electrode A2 voltage with reference to electrode A1.

2/7

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