TIP100 View Datasheet(PDF) - Semihow
Part Name
Description
Manufacturer
TIP100 Datasheet PDF : 5 Pages
| |||
TIP100/101/102
Monolithic Construction With Built In
Base-Emitter Shunt Resistors
- High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.)
- Collector-Emitter Sustaining Voltage
- Low Collector-Emitter Saturation Voltage
- Industrial Use
- Complementary to TIP105/106/107
Absolute Maximum Ratings Ta=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL RATING UNIT
Collector-Base Voltage : TIP100
: TIP101
VCBO
60
V
80
V
: TIP102
100
V
Collector-Emitter Voltage : TIP100
: TIP101
VCEO
60
V
80
V
: TIP102
100
V
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Ta=25℃)
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
VEBO
IC
ICP
IB
PC
PC
TJ
TSTG
5
V
8
A
15
A
1
A
2
W
80
W
150
℃
-65~150 ℃
NPN Epitaxial
Silicon Darlington
Transistor
Equivalent Circuit
TO-220
1. Base
2. Collector
3. Emitter
12 3
Electrical Characteristics Ta=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Collector-Emitter Sustaining Voltage
: TIP100
: TIP101
: TIP102
VCEO(SUS)
IC=30mA, IB=0
Collector Cut-off Current
ICEO
: TIP100
: TIP101
: TIP102
Collector Cut-off Current
ICBO
: TIP100
: TIP101
: TIP102
Emitter Cut-off Current
IEBO
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter ON Voltage
Output Capacitance
* Pulse Test: PW≤300us, Duty Cycle≤2%
VBE(on)
Cob
VCE=30V,IB=0
VCE=40V,IB=0
VCE=50V,IB=0
VCE=60V,IE=0
VCE=80V,IE=0
VCE=100V,IE=0
VEB=5V,IC=0
VCE=4V,IC=3A
VCE=4V,IC=8A
IC=3A,IB=6mA
IC=8A,IB=80mA
VCE=4V,IC=8A
VCB=10V,IE=0, f=0.1MHz
Min
Max
Unit
60
V
80
V
100
V
50
㎂
50
㎂
50
㎂
50
㎂
50
㎂
50
㎂
2
㎃
1000
200
20000
2
V
2.5
V
2.8
V
200
㎊
◎ SEMIHOW REV.A0,Oct 2007
Share Link: 