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US5U29 View Datasheet(PDF) - ROHM Semiconductor

Part Name
Description
Manufacturer
US5U29
ROHM
ROHM Semiconductor 
US5U29 Datasheet PDF : 5 Pages
1 2 3 4 5
Transistor
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Channel temperature
Power dissipation
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
Tch
PD 3
Limits
20
±12
±1
±4
0.4
4
150
0.7
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
VRM
25
VR
20
IF
0.7
IFSM 2
3.0
Tj
150
PD 3
0.5
<MOSFET AND Di>
Total power dissipation
PD 3
1.0
Range of Storage temperature
Tstg
55 to +150
1 Pw10µs, Duty cycle1% 2 60Hz1cyc. 3 Mounted on a ceramic board
Unit
V
V
A
A
A
A
°C
W / ELEMENT
V
V
A
A
°C
W / ELEMENT
W / TOTAL
°C
zElectrical characteristics (Ta=25°C)
<MOSFET>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
− ±10 µA VGS=±12V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 20
V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS
1 µA VDS=20V, VGS=0V
Gate threshold voltage
VGS (th) 0.7 − −2.0 V VDS=10V, ID=1mA
Static drain-source on-starte
resistance
RDS (on)
280 390 mID=1A, VGS=4.5V
310 430 mID=1A, VGS=4V
570 800 mID=0.5A, VGS=2.5V
Forward transfer admittance
Yfs 0.7
S VDS=10V, ID=0.5A
Input capacitance
Ciss
150 pF VDS=10V
Output capacitance
Coss
20
pF VGS=0V
Reverse transfer capacitance Crss
20 pF f=1MHz
Turn-on delay time
td (on)
9
ns ID=0.5A
Rise time
Turn-off delay time
Fall time
tr
td (off)
8
25
ns VDD 15V
VGS=4.5V
ns RL=30
tf
10
ns RG=10
Total gate charge
Qg
2.1
nC VDD 15V VGS=4.5V
Gate-source charge
Qgs
0.5
nC ID=1A
Gate-drain charge
Qgd
0.5
nC RL=15RG=10
Pulsed
<Body diode (sourcedrain)>
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
Conditions
VSD
− −1.2 V IS=0.4A, VGS=0V
<Di >
Parameter
Forward voltage drop
Reverse current
Symbol Min. Typ. Max. Unit
Conditions
VF
0.49 V IF=0.7A
IR
200 µA VR=20V
US5U29
Rev.C
2/4

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