Transistor
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Channel temperature
Power dissipation
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
Tch
PD ∗3
Limits
−20
±12
±1
±4
−0.4
−4
150
0.7
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
VRM
25
VR
20
IF
0.7
IFSM ∗2
3.0
Tj
150
PD ∗3
0.5
<MOSFET AND Di>
Total power dissipation
PD ∗3
1.0
Range of Storage temperature
Tstg
−55 to +150
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc. ∗3 Mounted on a ceramic board
Unit
V
V
A
A
A
A
°C
W / ELEMENT
V
V
A
A
°C
W / ELEMENT
W / TOTAL
°C
zElectrical characteristics (Ta=25°C)
<MOSFET>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 µA VGS=±12V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −20 −
−
V ID=−1mA, VGS=0V
Zero gate voltage drain current IDSS
−
−
−1 µA VDS=−20V, VGS=0V
Gate threshold voltage
VGS (th) −0.7 − −2.0 V VDS=−10V, ID=−1mA
−
Static drain-source on-starte
resistance
∗
RDS (on)
−
−
280 390 mΩ ID=−1A, VGS=−4.5V
310 430 mΩ ID=−1A, VGS=−4V
570 800 mΩ ID=−0.5A, VGS=−2.5V
Forward transfer admittance
Yfs ∗ 0.7
−
−
S VDS=−10V, ID=−0.5A
Input capacitance
Ciss
− 150 − pF VDS=−10V
Output capacitance
Coss
−
20
−
pF VGS=0V
Reverse transfer capacitance Crss
− 20 − pF f=1MHz
Turn-on delay time
td (on) ∗
−
9
−
ns ID=−0.5A
Rise time
Turn-off delay time
Fall time
tr ∗ −
td (off) ∗
−
8
25
−
−
ns VDD −15V
VGS=−4.5V
ns RL=30Ω
tf ∗ −
10
−
ns RG=10Ω
Total gate charge
Qg ∗ −
2.1
−
nC VDD −15V VGS=−4.5V
Gate-source charge
Qgs ∗ −
0.5
−
nC ID=−1A
Gate-drain charge
Qgd ∗ −
0.5
−
nC RL=15Ω RG=10Ω
∗ Pulsed
<Body diode (source−drain)>
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
Conditions
VSD
−
− −1.2 V IS=−0.4A, VGS=0V
<Di >
Parameter
Forward voltage drop
Reverse current
Symbol Min. Typ. Max. Unit
Conditions
VF
−
− 0.49 V IF=0.7A
IR
−
− 200 µA VR=20V
US5U29
Rev.C
2/4