IRFR4105TR View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRFR4105TR

HEXFET® Power MOSFET

International Rectifier 

IRFR/U4105

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

∆V(BR)DSS/∆TJ

RDS(on)

VGS(th)

gfs

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

LD

Internal Drain Inductance

LS

Internal Source Inductance

55 ––– ––– V VGS = 0V, ID = 250µA

––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA

––– ––– 0.045

VGS = 10V, ID = 16A „

2.0 ––– 4.0 V VDS = VGS, ID = 250µA

6.5 ––– ––– S VDS = 25V, ID = 16A‡

––– ––– 25

––– ––– 250

µA VDS = 55V, VGS = 0V

VDS = 44V, VGS = 0V, TJ = 150°C

––– ––– 100 nA VGS = 20V

––– ––– -100

VGS = -20V

––– ––– 34

ID = 16A

––– ––– 6.8 nC VDS = 44V

––– ––– 14

VGS = 10V, See Fig. 6 and 13 „‡

––– 7.0 –––

VDD = 28V

––– 49 ––– ns ID = 16A

––– 31 –––

RG = 18Ω

––– 40 –––

RD = 1.8Ω, See Fig. 10 „‡

Between lead,

D

––– 4.5 ––– nH 6mm (0.25in.)

––– 7.5 –––

from package

G

and center of die contact†

S

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

––– 700 –––

––– 240 –––

––– 100 –––

VGS = 0V

pF VDS = 25V

ƒ = 1.0MHz, See Fig. 5‡

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) ‡

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 27… A showing the

integral reverse

G

––– ––– 100

p-n junction diode.

S

––– ––– 1.6 V TJ = 25°C, IS = 16A, VGS = 0V „

––– 57 86 ns TJ = 25°C, IF = 16A

––– 130 200 nC di/dt = 100A/µs „‡

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ VDD = 25V, starting TJ = 25°C, L = 410µH

RG = 25Ω, IAS = 16A. (See Figure 12)

ƒ ISD ≤ 16A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

„ Pulse width ≤ 300µs; duty cycle ≤ 2%

… Calculated continuous current based on maximum allowable junction

temperature; Package limitation current = 20A

† This is applied for I-PAK, Ls of D-PAK is measured between lead and

center of die contact

‡ Uses IRFZ34N data and test conditions

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994

2

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