IRF460
Electrical Characteristics @ Tj = 25Ā°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
500 ā ā V
VGS = 0V, ID = 1.0mA
āBVDSS/āTJ Temperature Coefficient of Breakdown ā 0.78 ā V/Ā°C Reference to 25Ā°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
ā ā 0.27
ā
ā 0.31
ā¦
VGS = 10V, ID = 14A ā
VGS = 10V, ID =21A ā
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
2.0 ā 4.0 V
13 ā ā S ( )
VDS = VGS, ID =250ĀµA
VDS > 15V, IDS = 14A ā
IDSS
Zero Gate Voltage Drain Current
ā ā 25
ā ā 250 ĀµA
VDS=400V,VGS=0V
VDS =400V
VGS = 0V, TJ = 125Ā°C
IGSS
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
ā
ā 100 nA
ā ā -100
VGS = 20V
VGS = -20V
Qg
Total Gate Charge
84 ā 190
VGS = 10V, ID=21A
Qgs
Gate-to-Source Charge
12 ā 27 nC
VDS = 250V
Qgd
Gate-to-Drain (āMillerā) Charge
60 ā 135
td(on)
tr
td(off)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
ā ā 35
ā ā 120
ns
ā ā 130
VDD =250V, ID =21A,
RG =2.35ā¦
tf
Fall Time
ā ā 98
LS + LD
Total Inductance
ā
6.1
ā
nH
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
ā 4300
ā 1000 ā pF
ā 250 ā
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) ā
ā ā 21
A
ā ā 84
Test Conditions
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ā ā 1.8 V
ā ā 580 nS
ā ā 8.1 ĀµC
Tj = 25Ā°C, IS = 21A, VGS = 0V ā
Tj = 25Ā°C, IF = 21A, di/dt ā¤ 100A/Āµs
VDD ā¤ 50V ā
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction to Case
Junction to Ambient
For footnotes refer to the last page
2
Min Typ Max Units
ā ā 0.42
Ā°C/W
ā ā 30
Test Conditions
Typical socket mount
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