BF257 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
BF257 Datasheet PDF : 5 Pages
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BF257-BF258-BF259
THERMAL DATA
Rth j-cas e Thermal Resistance Junction-case
R th j-amb Thermal Resistance Junction-ambient
Max
30
°C/W
Max
175
°C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
ICB O
Collector Cutoff Current
(I E = 0)
for BF257
for BF258
for BF259
VCB = 100 V
VCB = 200 V
VCB = 250 V
V(BR) CB O
V(BR)CEO *
V(BR) EBO
VCE (s at )*
Collector-base
Breakdown Voltage
(I E = 0)
Collector-emitter
Breakdown Voltage
(I B = 0)
Emittter-base
Breakdown Voltage
(I C = 0)
Collector-emitter
Saturation Voltage
IC = 100 µA
IC = 10 mA
IE = 100 µA
for BF257
for BF258
for BF259
for BF257
for BF258
for BF259
IC = 30 mA
IB = 6 mA
h FE*
DC Current Gain
IC = 30 mA
VCE = 10 V
fT
Transition Frequency
Cre
Reverse Capacitance
I C = 15 mA
IC = 0
f = 1 MHz
VCE = 10 V
VCE = 30 V
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
Min. Typ.
160
250
300
160
250
300
5
25
90
3
DC Current Gain.
Max.
50
50
50
1
Unit
nA
nA
nA
V
V
V
V
V
V
V
V
MHz
pF
2/5
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