D
ARF461A
G
S
TO-247
ARF461B
Common
Source
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
250V 150W 65MHz
The ARF461A and ARF461B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
optimized for both linear and high efficiency classes of operation.
• Specified 250 Volt, 40.68 MHz Characteristics: • Low Cost Common Source RF Package.
•
Output Power = 150 Watts.
• Low Vth thermal coefficient.
•
Gain = 13dB (Class AB)
• Low Thermal Resistance.
PRELIMINARY •
Efficiency = 75% (Class C)
• Optimized SOA for Superior Ruggedness.
MAXIMUM RATINGS
Symbol Parameter
VDSS
VDGO
ID
VGS
PD
RqJC
TJ,TSTG
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
Total Power Dissipation @ TC = 25°C
Junction to Case
Operating and Storage Junction Temperature Range
All Ratings: TC = 25°C unless otherwise specified.
ARF461A/B
UNIT
1000
1000
Volts
6.5
Amps
±30
Volts
250
Watts
0.50
°C/W
-55 to 150
°C
TL
Lead Temperature: 0.063" from Case for 10 Sec.
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
1000
VDS(ON) On State Drain Voltage 1 (ID(ON) = 3.25A, VGS = 10V)
6.5
IDSS
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
250
IGSS
gfs
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Forward Transconductance (VDS = 25V, ID = 3.25A)
±100
3
4
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA)
3
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
µA
nA
mhos
Volts
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61