DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
BLOCK DIAGRAM
DLL
M2S56D20/ 30/ 40ATP
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
DQ0 - 15
UDQS,LDQS
I/O Buffer
QS Buffer
Memory
Array
Bank #0
Memory
Array
Bank #1
Memory
Array
Bank #2
Memory
Array
Bank #3
Mode Register
Control Circuitry
Address Buffer
A0-12 BA0,1
Clock Buffer
Control Signal Buffer
/CS /RAS /CAS /WE UDM,
CLK /CLK CKE
LDM
TYPE DESIGNATION CODE
This rule is applied to only Synchronous DRAM family.
M 2 S 56 D 3 0 A KT – 60 UL
Power Grade UL/U: Ultra Low power L: Low power, Blank: standard
Speed Grade 75: 133MHz@CL=2.5,100MHz@CL=2.0 (DDR266B)
75A: 133MHz@CL=2.5,133MHz@CL=2.0 (DDR266A)
60: 166MHz@CL=2.5,133MHz@CL=2.0 (DDR333B)
Package Type TP: TSOP(II), KT: sTSOP(Small TSOP)
Process Generation
Function Reserved for Future Use
Organization 2 n 2: x4, 3: x8, 4: x16
DDR Synchronous DRAM
Density 56: 256M bits
Interface V:LVTTL, S:SSTL_3, _2
Memory Style (DRAM)
Mitsubishi Main Designation
6