G80N60UFD View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
G80N60UFD Datasheet PDF : 8 Pages
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4500
4000
3500
3000
2500
2000
1500
1000
500
0
1
Cies
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
Coes
Cres
10
30
Collector - Emitter Voltage, V [V]
CE
Fig 7. Capacitance Characteristics
2000
Common Emitter
VCC = 300V, VGE = ± 15V
1000 I = 40A
C
TC = 25℃
Toff
TC = 125℃
Tf
100
Tf
20
1
10
80
Gate Resistance, RG [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
500
Common Emitter
V = 300V, V = ± 15V
CC
GE
R
G
=
5Ω
T = 25℃
C
T = 125℃
C
100
Ton
Tr
10
10
20
30
40
50
60
70
80
Collector Current, I [A]
C
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
500
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 40A
TC = 25℃
T = 125℃
Ton
C
Tr
100
20
1
10
70
Gate Resistance, RG [Ω ]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
5000
Common Emitter
VCC = 300V, VGE = ± 15V
I = 40A
C
T = 25℃
C
T = 125℃
C
1000
Eoff
Eon
Eoff
100
1
10
80
Gate Resistance, RG [Ω ]
Fig 10. Switching Loss vs. Gate Resistance
2000
1000
Common Emitter
V = 300V, V = ± 15V
CC
GE
R
G
=
5Ω
T = 25℃
C
T = 125℃
C
100
Toff
Tf
Toff
Tf
20
10
20
30
40
50
60
70
80
Collector Current, I [A]
C
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGH80N60UFD Rev. B1
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