MJ11014 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
MJ11014 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
MJ11014
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0
90
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 20A; IB= 0.2A
V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 30A; IB= 0.3A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 20A; IB= 0.2A
VBE(sat)-2 Base-Emitter Saturation Voltage
ICER
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 30A; IB= 0.3A
VCE=90V; RBE=1kΩ
VCE=90V; RBE=1kΩ; TC=150℃
VCE= 50V; IB= 0
3.0
V
4.0
V
3.5
V
5.0
V
1.0
5.0
mA
1.0 mA
IEBO
Emitter Cutoff Current
hFE-1
DC Current Gain
hFE-2
DC Current Gain
VEB= 5V; IC= 0
IC= 20A, VCE= 5V
IC= 30A, VCE= 5V
1000
200
5.0 mA
isc Website：www.iscsemi.cn
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