FS30SM-6(2003) View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
FS30SM-6 Datasheet PDF : 5 Pages
| |||
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
10
ID = 60A
8
45A
6
4
30A
2
TC = 25°C
Pulse Test
0
0
4
8
15A
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
40
TC = 25°C
VDS = 50V
32
Pulse Test
24
16
8
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
5
3
Ciss
2
103
7
5
3
Coss
2
102
7
Crss
5
3 Tch = 25°C
2 f = 1MHz
VGS = 0V
101
23
5 7 100 2 3
5 7 101 2 3
5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS30SM-6
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
0.20
TC = 25°C
Pulse Test
0.16
VGS = 10V
0.12
20V
0.08
0.04
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
102
7 VDS = 10V
5 Pulse Test
3
2
TC = 25°C
101
7
125°C 75°C
5
3
2
100
100 2 3 5 7 101 2 3 5 7 102
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
Tch = 25°C
VDD = 150V
5
VGS = 10V
3
td(off) RGEN = RGS = 50Ω
2
102
tf
7
5
tr
3
td(on)
2
101
100 2 3 5 7 101 2 3 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
Share Link: 