INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
TIP53
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.6A
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 10V
ICES
Collector Cutoff Current
VCE= 450V; VBE= 0
ICEO
Collector Cutoff Current
VCE= 250V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.3A; VCE= 10V
hFE-2
DC Current Gain
IC= 3A; VCE= 10V
fT
Current-Gain—Bandwidth Product
IC= 0.2A; VCE= 10V
MIN MAX UNIT
350
V
1.5
V
1.5
V
1.0
mA
1.0
mA
1.0
mA
30
150
10
2.5
MHz
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