Transistors
1000
500
Ta=25°C
200
100 Ta=100°C
25°C
50
−25°C
20
10
5
2
1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs.
collector current ( ΙΙ )
2SC5161
10
Ta=25°C
5
2
1
0.5
0.2
IC/IB=10
0.1
5
0.05
0.02
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation
voltage vs. collector current
10
5
Ta=−25°C
2
25°C
1
100°C
0.5
IC/IB=5
0.2
0.1
0.05
100°C
25°C
0.02
−25°C
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation
voltage vs. collector current
Base-emitter saturation voltage
vs. collector current
1000
500
Ta=25°C
VCE=10V
200
100
50
20
10
5
2
1
−0.001−0.002 −0.005 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1
EMITTER CURRENT : IE (A)
Fig.7 Gain bandwidth product vs.
emitter current
1000
500
200
100
50
Ta=25°C
f=1MHz
IE=0A
20
10
5
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Collector output capacitance
vs. collector-base voltage
10
IC=10IB1=−10IB2
5
Pulse
2
tstg
1
0.5
tf
0.2
ton
0.1
0.05
0.02
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.9 Switching time vs.
collector current
!Switching characteristic measurement circuit
RL=250Ω
VIN
PW
PW 50µs
duty cycle≤1%
IC
IB1
T.U.T.
IB2
VCC 200V
Base current
IB1
wave form
IB2
90%
IC
Collector current
wave form
10%
ton
tstg tf