IRF540NPBF View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRF540NPBF

HEXFET® Power MOSFET

International Rectifier 

IRF540NPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)DSS

∆V(BR)DSS/∆TJ

RDS(on)

VGS(th)

gfs

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

LD

Internal Drain Inductance

LS

Internal Source Inductance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

EAS

Single Pulse Avalanche Energy

Min. Typ. Max. Units

Conditions

100 ––– ––– V VGS = 0V, ID = 250µA

––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA

––– ––– 44 mΩ VGS = 10V, ID = 16A

2.0 ––– 4.0 V VDS = VGS, ID = 250µA

21 ––– ––– S VDS = 50V, ID = 16A

––– ––– 25

––– ––– 250

µA VDS = 100V, VGS = 0V

VDS = 80V, VGS = 0V, TJ = 150°C

––– ––– 100 nA VGS = 20V

––– ––– -100

VGS = -20V

––– ––– 71

ID = 16A

––– ––– 14 nC VDS = 80V

––– ––– 21

––– 11 –––

VGS = 10V, See Fig. 6 and 13

VDD = 50V

––– 35 ––– ns ID = 16A

––– 39 –––

RG = 5.1Ω

––– 35 –––

VGS = 10V, See Fig. 10

Between lead,

D

––– 4.5 –––

6mm (0.25in.)

nH from package

G

––– 7.5 –––

and center of die contact

S

––– 1960 –––

VGS = 0V

––– 250 –––

VDS = 25V

––– 40 ––– pF ƒ = 1.0MHz, See Fig. 5

––– 700 185 mJ IAS = 16A, L = 1.5mH

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11)

Starting TJ = 25°C, L =1.5mH

RG = 25Ω, IAS = 16A. (See Figure 12)

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 33

A showing the

integral reverse

G

––– ––– 110

p-n junction diode.

S

––– ––– 1.2 V TJ = 25°C, IS = 16A, VGS = 0V

––– 115 170 ns TJ = 25°C, IF = 16A

––– 505 760 nC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

ISD ≤ 16A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

Pulse width ≤ 400µs; duty cycle ≤ 2%.

This is a typical value at device destruction and represents

operation outside rated limits.

This is a calculated value limited to TJ = 175°C .

2

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