IRF540NS View Datasheet(PDF) - International Rectifier
Part Name
Description
Manufacturer
IRF540NS Datasheet PDF : 11 Pages
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IRF540NS/IRF540NL
Electrical Characteristics @ TJ = 25ยฐC (unless otherwise specified)
V(BR)DSS
โV(BR)DSS/โTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
EAS
Single Pulse Avalanche Energyยย
Min. Typ. Max. Units
100 โโโ โโโ V
โโโ 0.12 โโโ V/ยฐC
โโโ โโโ 44 mโฆ
2.0 โโโ 4.0 V
21 โโโ โโโ S
โโโ โโโ 25 ยตA
โโโ โโโ 250
โโโ โโโ 100
nA
โโโ โโโ -100
โโโ โโโ 71
โโโ โโโ 14 nC
โโโ โโโ 21
โโโ 11 โโโ
โโโ 35 โโโ
ns
โโโ 39 โโโ
โโโ 35 โโโ
โโโ 4.5 โโโ
nH
โโโ 7.5 โโโ
โโโ 1960 โโโ
โโโ 250 โโโ
โโโ 40 โโโ pF
โโโ 700ย
185ย mJ
Conditions
VGS = 0V, ID = 250ยตA
Reference to 25ยฐC, ID = 1mA ย
VGS = 10V, ID = 16A ย
VDS = VGS, ID = 250ยตA
VDS = 50V, ID = 16Aยย
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150ยฐC
VGS = 20V
VGS = -20V
ID = 16A
VDS = 80V
VGS = 10V, See Fig. 6 and 13
VDD = 50V
ยย
ID = 16A
RG = 5.1โฆ
VGS = 10V, See Fig. 10 ยย
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
ฦ = 1.0MHz, See Fig. 5 ย
IAS = 16A, L = 1.5mH
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)ย
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Notes:
ย Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
ย Starting TJ = 25ยฐC, L =1.5mH
RG = 25โฆ, IAS = 16A. (See Figure 12)
ย ISD โค 16A, di/dt โค 340A/ยตs, VDD โค V(BR)DSS,
TJ โค 175ยฐC
ย Pulse width โค 400ยตs; duty cycle โค 2%.
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
โโโ โโโ 33
A showing the
integral reverse
G
โโโ โโโ 110
p-n junction diode.
S
โโโ โโโ 1.2 V TJ = 25ยฐC, IS = 16A, VGS = 0V ย
โโโ 115 170 ns TJ = 25ยฐC, IF = 16A
โโโ 505 760 nC di/dt = 100A/ยตs ยย
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ย
This is a typical value at device destruction and represents
operation outside rated limits.
ย This is a calculated value limited to TJ = 175ยฐC .
ย Uses IRF540N data and test conditions.
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994
2
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