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Part Name
Description
SPB18P06PG(2008) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
SPB18P06PG
(Rev.:2008)
SIPMOS® Power-Transistor
Infineon Technologies
SPB18P06PG Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
1 Power dissipation
P
tot
=f(
T
A
)
2 Drain current
I
D
=f(
T
A
); |
V
GS
|
≥
10 V
SPB18P06P
G
18
75
16
14
60
12
45
10
8
30
6
4
15
2
0
0
40
80
120
160
T
A
[°C]
0
0
40
80
120
160
T
A
[°C]
3 Safe operating area
I
D
=f(
V
DS
);
T
A
=25 °C;
D
=0
parameter:
t
p
10
2
limited by on-state
resistance
10
1
10
0
10
-1
4 Max. transient thermal impedance
Z
thJA
=f(
t
p
)
parameter:
D
=
t
p
/
T
10
1
10 µs
100 µs
1 ms
10 ms
DC
10
0
0.5
0.2
0.1
0.05
10
-1
0.02
0.01
10
-5
sin
1
g
0
le
-4
pulse
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
-2
10
-1
Rev 1.
4
10
0
10
1
-V
DS
[V]
10
2
page 4
t
p
[s]
200
8
-
0
7
-
09
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