SPB18P06PG(2008) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
SPB18P06PG Datasheet PDF : 8 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=-13.2 A; V GS=-10 V
SPB18P06P G
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS; I D=-1000 µA
300
5
4.5
250
4
max.
200
98 %
150
3.5
3
typ.
2.5
typ.
100
2
min.
1.5
1
50
0.5
0
-60
-20
20
60 100 140 180
T j [°C]
0
-60 -20
20
60 100 140 180
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
103
Ciss
Coss
Crss
102
25 °C, 98%
101
175 °C, 98%
100
10-1
25 °C, typ
175 °C, typ
101
0
Rev 1.4
5
10
15
20
25
-V DS [V]
10-2
0
0.5
1
1.5
2
2.5
3
-V SD [V]
page 6
2008-07-09
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