Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Part Name
Description
K8A50DA View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
K8A50DA
Silicon N Channel MOS Type (π -MOSⅦ )Field Effect Transistor
Toshiba
K8A50DA Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
5
10
7
6.5
8
4
COMMON SOURCE
Tc
=
25°C
PULSE TEST
3
6
2
5.5
1
VGS
=
5 V
0
0
2
4
6
8
DRAIN-SOURCE VOLTAGE V
DS
10
(V)
TK8A50DA
I
D
– V
DS
10
10
7.5
COMMON SOURCE
Tc
=
25°C
8
PULSE TEST
8
7
6
6.5
4
2
6
VGS
=
5.5 V
0
0
10
20
30
40
50
DRAIN-SOURCE VOLTAGE V
DS
(V)
I
D
– V
GS
10
COMMON SOURCE
VDS
=
20 V
PULSE TEST
8
6
4
25
2
100
Tc
= −
55 °C
0
0
2
4
6
8
GATE-SOURCE VOLTAGE V
GS
10
(V)
V
DS
– V
GS
20
COMMON SOURCE
Tc
=
25
℃
PULSE TEST
16
12
8
ID
=
7.5 A
4
3.3
1.7
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE V
GS
(V)
⎪
Y
fs
⎪
– I
D
100
COMMON SOURCE
VDS
=
20 V
Tc
=
25°C
PULSE TEST
10
1
R
DS (ON)
– I
D
10
COMMON SOURCE
VGS
=
10 V
Tc
=
25°C
PULSE TEST
1
0.1
0.1
1
10
100
DRAIN CURRENT I
D
(A)
0.1
0.1
1
10
100
DRAIN CURRENT I
D
(A)
3
2013-11-01
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]