MMDL914T3G(2013) View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
MMDL914T3G Datasheet PDF : 4 Pages
| |||
MMDL914T1G, SMMDL914T1G, MMDL914T3G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(IR = 100 mAdc)
Reverse Voltage Leakage Current
(VR = 20 Vdc)
(VR = 75 Vdc)
Diode Capacitance
(VR = 0 V, f = 1.0 MHz)
Forward Voltage
(IF = 10 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
Symbol
Min
V(BR)
100
IR
−
−
CT
−
VF
−
trr
−
Max
Unit
Vdc
−
25
nAdc
5.0
mAdc
pF
4.0
Vdc
1.0
ns
4.0
820 W
+10 V
2.0 k
100 mH IF
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
D.U.T.
0.1 mF
tr
tp
t
10%
50 W INPUT
SAMPLING
VR
OSCILLOSCOPE
90%
INPUT SIGNAL
IF
trr
t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2
Share Link: 