2N6667_05 View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

2N6667_05

Darlington Silicon Power Transistors

ON Semiconductor 

2N6667, 2N6668

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPES e.g.,

1N5825 USED ABOVE IB [ 100 mA

MSD6100 USED BELOW IB [ 100 mA

FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0

tr, tf v 10 ns

DUTY CYCLE = 1.0%

V2

APPROX

+8V

0

V1

APPROX

− 12 V

25 μs

VCC

− 30 V

RC

SCOPE

TUT

RB

51 D1

[ 8 k [ 120

+ 4.0 V

Figure 2. Switching Times Test Circuit

TA TC

4 80

3 60

2 40

1 20

TC

TA

0

0 20 40 60 80 100 120 140 160

T, TEMPERATURE (°C)

Figure 3. Power Derating

10

7

5

3

2

1

0.7

0.5

0.3

0.2

0.1

0.1

VCC = 30 V

IC/IB = 250

IB1 = IB2

tr

TJ = 25°C

ts

tf

.td

0.2 0.3 0.5 0.7 1

23

IC, COLLECTOR CURRENT (AMPS)

5 7 10

Figure 4. Typical Switching Times

1

D = 0.5

0.5

0.3

0.2

0.2

0.1

0.1

0.05

0.05

0.03

0.02

0.02

0.01

0.01

0.01 0.02

SINGLE PULSE

0.05 0.1 0.2

0.5 1

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

ZθJC(t) = r(t) RθJC

RθJC = 1.92°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) RθJC(t)

2

5 10 20

t, TIME (ms)

50 100 200

500 1000

Figure 5. Thermal Response

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