BDX69C View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
BDX69C Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDX69/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX69
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDX69A
BDX69B
IC= 100mA ; L= 25mH
BDX69C
VCE(sat) Collector-Emitter Saturation Voltage IC= 20A; IB= 80mA
VBE(on)
ICBO
Base-Emitter On Voltage
BDX69
Collector
Cutoff Current
BDX69A
BDX69B
BDX69C
BDX69
IC= 20A; VCE= 3V
VCB= 80V; IE= 0
VCB= 40V; IE= 0; TC=200℃
VCB= 100V; IE= 0
VCB= 50V; IE= 0; TC=200℃
VCB= 120V; IE= 0
VCB= 60V; IE= 0; TC=200℃
VCB= 140V; IE= 0
VCB= 70V; IE= 0; TC=200℃
VCE= 30V; IB=B 0
ICEO
Collector
Cutoff Current
BDX69A VCE= 40V; IB=B 0
BDX69B VCE= 50V; IB=B 0
BDX69C VCE= 60V; IB=B 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 5A; VCE= 3V
hFE-2
DC Current Gain
IC= 20A; VCE= 3V
hFE-3
DC Current Gain
IC= 30A; VCE= 3V
COB
Output Capacitance
IE= 0 ; VCB= 10V, ftest= 1.0MHz
MIN TYP. MAX UNIT
60
80
V
100
120
2.0
V
2.5
V
2.0
10
2.0
10
mA
2.0
10
2.0
10
6.0 mA
10 mA
3000
1000
4000
600
pF
isc Website：www.iscsemi.cn
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