1200
1000
800
Cies
600
400
200
0
1
Coes
Cres
10
Vce [V]
Fig 7. Typical Capacitance vs.
Collector to Emitter Voltage
600
Vcc = 600V
Ic = 5A
Esw
500
400
Eon
300
200
Eoff
100
0
5
10
15
20
25
30
Rg [Ω]
Fig 9. Typical Switching Loss vs.
Gate Resistance
1.2
Vcc = 600V
Rg = 10Ω
Esw
Tc = 100℃
1.0
0.8
0.6
Eon
Eoff
0.4
0.2
4
6
8
10
Ic [A]
Fig 11. Typical Switching Loss vs.
Collector Current
©2003 Fairchild Semiconductor Corporation
Common Emitter
10
R
L
=
120Ω,
V
CC
=
600V
T = 25oC
C
8
6
4
2
0
0
10
20
30
Gate Charge, Qg [nC]
Fig 8. Typical Gate Charge Characteristic
1200
1000
Vcc = 600V
Rg = 10Ω
Vge = 10V
Ic = 10A
800
600
Ic = 5A
400
Ic = 3A
200
20
40
60
80
100
Tc [℃]
Fig 10. Typical Switching Loss vs.
Case Temperature
10
Safe Operating Area
Vge = 20V, Tc = 100℃
1
1
10
100
1000
Vce [V]
Fig 12. Turn-Off SOA
SGS5N150UF Rev. B