TDA1170N-1 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

TDA1170N-1

LOW-NOISE TV VERTICAL DEFLECTION SYSTEM

STMicroelectronics 

TDA1170N

ELECTRICAL CHARACTERISTICS

(Refer to the test circuits, VS = 35 V, Tamb = 25oC,unless otherwise specified)

DC CHARACTERISTICS

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit Fig.

I2

Pin 2 Quiescent Current

I3 = 0

7 14 mA 1b

I5

Pin 5 Quiescent Current

I4 = 0

8 17 mA 1b

– I9

Oscillator Bias Current

V9 = 1V

0.1 1 µA 1a

– I10

Amplifier Input Bias Current

V10 = 1V

1

10 µA 1b

– I12

Ramp Generator Bias Current

V12 = 0

0.02 0.3 µA 1a

– I12

Ramp Generator Current

I7 = 20µA, V12 = 0

18.5 20 21.5 µA 1b

∆I12

I12

Ramp Generator Non-linearity

∆V12 = 0 to 12V, I7 = 20µA

0.2 1

% 1b

Vs

Supply Voltage Range

10

35 V

V1

Pin 1 Saturation Voltage to Ground I1 = 1mA

1 1.4 V

V3

Pin 3 Saturation Voltage to Ground I3 = 10mA

300 450 mV 1a

V4

Qiuescent output Voltage

VS = 10V

R1 = 1kΩ, R2 = 1kΩ

4.1 4.4 4.75 V 1a

VS = 35V

R1 = 3kΩ, R2 = 1kΩ

8.3 8.8 9.45 V 1a

V4L

Output Saturation Voltage to Ground – I4 = 0.1A

– I4 = 0.8A

0.9 1.2 V 1c

1.9 2.3 V 1c

V4H

Output Saturation Voltage to Supply I4 = 0.1A

I4 = 0.8A

1.4 2.1 V 1d

2.8 3.2 V 1d

V6

Regulated Voltage at Pin 6

6.1 6.5 6.9 V 1b

V7

Regulated Voltage at Pin 7

I7 = 20µA

6.2 6.6 7

V 1b

|∆V6|

∆VS

;

∆V7

∆VS

Regulated Voltage Drift with Supply

Voltage

∆VS = 10 to 35V

1

mV/V 1b

V10

Amplifier Input Reference Voltage

2.07 2.2 2.3 V

R8

Pin 8 Input Resistance

V8 ≤ 0.4V

1

MΩ 1a

3/8

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