Low-Noise, Regulated, -2V GaAsFET Bias
___________________Chip Topography
C1+
C1-
NEGOUT
NEGOUT
IN
GND
GND
0.145"
(3.683mm)
OUT
SHDN
FB (CONT)
0.085"
(2.159mm)
( ) ARE FOR MAX843/MAX844
TRANSISTOR COUNT: 148
SUBSTRATE CONNECTED TO IN
10 ______________________________________________________________________________________