EMH2411R View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

EMH2411R

N-Channel Power MOSFET 30V, 5A, 36.5mΩ, Dual EMH8

ON Semiconductor 

EMH2411R

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

RDS(on)3

RDS(on)4

RDS(on)5

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

ID=1mA, VGS=0V

VDS=30V, VGS=0V

VGS=±8V, VDS=0V

VDS=10V, ID=1mA

VDS=10V, ID=3A

ID=2.5A, VGS=4.5V

ID=2.5A, VGS=4V

ID=1A, VGS=3.7V

ID=1A, VGS=3.1V

ID=1A, VGS=2.5V

See specified Test Circuit.

VDS=10V, VGS=4.5V, ID=5A

IS=5A, VGS=0V

Switching Time Test Circuit

VIN

4.5V

0V

VIN

PW=10μs

D.C.≤1%

G

VDD=10V

ID=3A

RL=3.33Ω

D

VOUT

Rg

EMH2411R

P.G

50Ω

S

Rg=2kΩ

Ordering Information

Device

EMH2411R-TL-H

Package

EMH8

Shipping

3,000pcs./reel

Ratings

Unit

min

typ

max

30

V

1

μA

±10

μA

0.5

1.3

V

3

5

S

19.5

28

36.5 mΩ

20

29

38 mΩ

21

30

39 mΩ

21

33

46.5 mΩ

22.5

38

54 mΩ

300

ns

840

ns

3200

ns

1650

ns

5.9

nC

1

nC

1.2

nC

0.8

1.2

V

memo

Pb Free and Halogen Free

No. A1421-2/7

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