IRFZ46ZSPBF(2004) View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRFZ46ZSPBF
(Rev.:2004)

HEXFET® Power MOSFET

International Rectifier 

IRFZ46Z/S/LPbF

10000

1000

VGS = 0V, f = 1 MHZ

Ciss = C gs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

Coss

Crss

100

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

12.0

ID= 31A

10.0

VDS= 44V

VDS= 28V

VDS= 11V

8.0

6.0

4.0

2.0

0.0

0

5 10 15 20 25 30 35

QG Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

1000.00

100.00

10.00

TJ = 175°C

1.00

TJ = 25°C

0.10

VGS = 0V

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

1000

100

OPERATION IN THIS AREA

LIMITED BY R DS(on)

10

100µsec

1

Tc = 25°C

Tj = 175°C

Single Pulse

0.1

1

10

1msec

10msec

100

VDS, Drain-to-Source Voltage (V)

1000

Fig 8. Maximum Safe Operating Area

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