ACST6(2009) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
ACST6 Datasheet PDF : 15 Pages
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Characteristics
ACST6
Figure 4.
On-state rms current versus
ambient temperature (free air
convection, full cycle)
IT(RMS)(A)
2.5
2.0
D2PAK with
copper
surface = 1
cm2
α=180°
1.5
TO-220FPAB
TO220AB
1.0
I2PAK
Figure 5. Relative variation of thermal
impedance versus pulse duration
K = [Zth / Rth]
1.0E+00
Zth(j-c)
1.0E-01
TO-220AB
D²PAK
I²PAK
TO-220FPAB
Zth(j-a)
0.5
0.0
0
Ta(°C)
1.0E-02
25
50
75
100
125
1.0E-03
1.0E-01
1.0E+01
tp(s)
1.0E+03
Figure 6.
Relative variation of gate trigger
current (IGT) and voltage (VGT)
versus junction temperature
Figure 7.
Relative variation of holding
current (IH) and latching current (IL)
versus junction temperature
IGT, VGT[Tj] / IGT, VGT[Tj = 25 °C]
3.0
IGT Q3
2.5
2.0
IGT Q1-Q2
1.5
1.0 VGT Q1-Q2-Q3
0.5
0.0
-50
-25
0
25
50
(typical values)
Tj (°C)
75
100
125
IH, IL[Tj] / IH, IL[Tj = 25 °C]
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
Tj(°C)
25
50
(typical values)
IL
IH
75
100
125
Figure 8. Surge peak on-state current
versus number of cycles
Figure 9.
Non repetitive surge peak on-state
current and corresponding value of
I2t versus sinusoidal pulse width
ITSM(A)
50
40
30
20 Repetitive
TC =106 °C
10
0
1
Non repetitive
Tj initial = 25 °C
t = 20 ms
One cycle
Number of cycles
Number of cycles
10
100
1000
1000
ITSM(A),
I²t (A²s)
dl /dt limitation: 100
A
/
µs
100
Tj initial = 25 °C
ITSM
I²t
10
tp(ms)
1
0.01
0.10
1.00
10.00
4/15
Doc ID 7297 Rev 9
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