DTB123Y View Datasheet(PDF) - ROHM Semiconductor
Part Name
Description
Manufacturer
DTB123Y Datasheet PDF : 7 Pages
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DTB123Y
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
VCC
VIN
IC(MAX.)*1
PD *2
Tj
Tstg
Data Sheet
Values
Unit
-50
V
-12 to +5
V
-500
mA
200
mW
150
°C
-55 to +150
°C
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Input voltage
VI(off)
VI(on)
Output voltage
VO(on)
Input current
II
Output current
IO(off)
DC current gain
GI
Input resistance
R1
Resistance ratio
R2/R1
Conditions
VCC = -5V, IO = -100μA
VO = -0.3V, IO = -20mA
IO / II = -50mA / -2.5mA
VI = -5V
VCC = -50V, VI = 0V
VO = -5V, IO = -50mA
-
-
Transition frequency
fT *1
VCE = -10V, IE = 50mA,
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
Min.
-
-2.0
-
-
-
56
1.54
3.6
-
Typ.
-
-
-0.1
-
-
-
2.2
4.5
200
Max.
-0.3
-
-0.3
-3.6
-0.5
-
2.86
5.5
-
Unit
V
V
mA
mA
-
kW
-
MHz
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© 2012 ROHM Co., Ltd. All rights reserved.
2/6
2012.07 - Rev.F
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