IS42R16320D-5TL View Datasheet(PDF) - Integrated Silicon Solution
Part Name
Description
Manufacturer
IS42R16320D-5TL Datasheet PDF : 66 Pages
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IS42/45R86400D/16320D/32160D, IS42/45S86400D/16320D/32160D
CAPACITANCE CHARACTERISTICS(1) (At Ta = 0 to +25°C, Vdd = Vddq = 3.3 ± 0.3V, f = 1MHz)
Symbol
Cin1
Cin2
Ci/o
Parameter
Input Capacitance: CLK
Input Capacitance:All other input pins
Data Input/Output Capacitance: DQS
Min.
2.5
2.5
4.0
Max. Unit
3.5
pF
3.8
pF
6.0
pF
Note: 1. The parameter is characterized.
THERMAL RESISTANCE
Package
Substrate
Alloy42 TSOP2(54)
Copper TSOP2(54)
BGA(54)
BGA(90)
4-layer
4-layer
4-layer
4-layer
Theta-ja
(Airflow = 0m/s)
53.3
42.3
36.7
36.1
Theta-ja
(Airflow = 1m/s)
45.2
37.1
30.5
30.7
Theta-ja
(Airflow = 2m/s)
42.0
34.5
28.9
27.7
Theta-jc
7.8
7.5
4.2
3.0
Units
C/W
C/W
C/W
C/W
DC ELECTRICAL CHARACTERISTICS (x8, x16)
(Recommended Operation Conditions unless otherwise noted.)
Symbol Parameter
Test Condition
-5
-6
Idd1 (1) Operating Current
One bank active, CL = 3, BL = 1,
170 150
tclk = tclk (min), trc = trc (min)
Idd2p
Precharge Standby Current CKE ≤ Vil (max), tck = 15ns
(In Power-Down Mode)
8
8
Idd2ps
Precharge Standby Current CKE ≤ Vil (max), CLK ≤ Vil (max)
(In Power-Down Mode)
8
8
Idd2n (2) Precharge Standby Current CS ≥ Vcc - 0.2V, CKE ≥ Vih (min)
35
35
Idd2ns
(In Non Power-Down Mode) tck = 15ns
Precharge Standby Current CS ≥ Vcc - 0.2V, CKE ≥ Vih (min) or
30
30
(In Non Power-Down Mode) CKE ≤ Vil (max), All inputs stable
Idd3p Active Standby Current
CKE ≤ Vil (max), tck = 15ns
15
15
(Power-Down Mode)
Idd3ps Active Standby Current
CKE ≤ Vil (max), CLK ≤ Vil (max)
15
15
(Power-Down Mode)
Idd3n (2) Active Standby Current
CS ≥ Vcc - 0.2V, CKE ≥ Vih (min)
40
40
Idd3ns
(In Non Power-Down Mode) tck = 15ns
Active Standby Current
CS ≥ Vcc - 0.2V, CKE ≥ Vih (min) or
30
30
(In Non Power-Down Mode) CKE ≤ Vil (max), All inputs stable
Idd4
Operating Current
All banks active, BL = 4, CL = 3,
200 180
tck = tck (min)
Idd5
Auto-Refresh Current
trc = trc (min), tclk = tclk (min)
250 230
Idd6
Self-Refresh Current
CKE ≤ 0.2V
12
12
-7
Unit
140
mA
8
mA
8 mA
35 mA
30 mA
15
mA
15 mA
40 mA
30 mA
160
mA
210 mA
12 mA
Notes:
1. Idd (max) is specified at the output open condition.
2. Input signals are changed one time during 30ns.
3. All values applicable for operation with Ta ≤ 85°C.
4. For A2 temperature grade with Ta > 85°C: IDD2P and IDD2PS are derated to 50% above the values; IDD3P and IDD3PS are
derated to 30% above the values.
Integrated Silicon Solution, Inc. — www.issi.com
17
Rev. A
08/29/2012
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