2N4338-E3 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
2N4338-E3 Datasheet PDF : 7 Pages
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2N4338/4339/4340/4341
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
2N4338
2N4339
2N4340
2N4341
VGS(off) (V)
−0.3 to −1
−0.6 to −1.8
−1 to −3
−2 to −6
V(BR)GSS Min (V) gfs Min (mS)
−50
0.6
−50
0.8
−50
1.3
−50
2
IDSS Max (mA)
0.6
1.5
3.6
9
FEATURES
D Low Cutoff Voltage: 2N4338 <1 V
D High Input Impedance
D Very Low Noise
D High Gain: AV = 80 @ 20 mA
BENEFITS
D Full Performance from Low-Voltage
Power Supply: Down to 1 V
D Low Signal Loss/System Error
D High System Sensitivity
D High-Quality Low-Level Signal
Amplification
APPLICATIONS
D High-Gain, Low-Noise Amplifiers
D Low-Current, Low-Voltage
Battery-Powered Amplifiers
D Infrared Detector Amplifiers
D Ultrahigh Input Impedance
Pre-Amplifiers
DESCRIPTION
The 2N4338/4339/4340/4341 n-channel JFETs are designed
for sensitive amplifier stages at low- to mid-frequencies. Low
cut-off voltages accommodate low-level power supplies and
low leakage for improved system accuracy.
The TO-206AA (TO-18) package is hermetically sealed and
suitable for military processing (see Military Information). For
similar products in TO-226AA (TO-92) and TO-236 (SOT-23)
packages, see the J/SST201 series data sheet.
TO-206AA
(TO-18)
S
1
2
3
D
Top View
G and Case
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50 V
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 175_C
For applications information see AN102 and AN106.
Document Number: 70240
S-40990—Rev. F, 24-May-04
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Notes
a. Derate 2 mW/_C above 25_C
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