2N62K3 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
2N62K3 Datasheet PDF : 25 Pages
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Electrical characteristics
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on
Zero gate voltage
VDS = 620 V
drain current (VGS = 0) VDS = 620 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
Gate threshold voltage VDS = VGS, ID = 50 µA
Static drain-source
on-resistance
VGS = 10 V, ID = 1.1 A
STB/D/F/P/U2N62K3
Min. Typ. Max. Unit
620
V
1 µA
50 µA
± 10 µA
3 3.75 4.5 V
3
3.6 Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz, VGS = 0 -
340
26
4
pF
- pF
pF
Co(tr)(1)
Equivalent
capacitance time
related
VDS = 0 to 496 V, VGS = 0
-
17
- pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
5
-
Ω
Qg Total gate charge
VDD = 496 V, ID = 1.1 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 20)
15
nC
-
3
- nC
9
nC
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
4/25
Doc ID 018898 Rev 2
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