Transistors
2SA1834
zElectrical characteristics (Ta=25°C)
−10
−5
−2 Ta=150°C
−1
25°C
−500m
−55°C
VCE= −2V
10000
5000
2000
1000
−200m
500
−100m
Ta=25°C
VCE= −5V
−2V
−1V
−50m
200
−20m
−10m
−5m
−2m
−1m
0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4
100
50
20
10
−20m −50m −100m −200m −500m −1 −2 −5 −10 −20
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (A)
10000
5000
VCE= −2V
2000
1000
Ta=150°C
500
25°C
200
−55°C
100
50
20
10
−20m −50m −100m −200m −500m −1 −2 −5 −10 −20
COLLECTOR CURRENT : IC (A)
Fig.1 Ground emitter propagation Fig.2 DC current gain vs. collector current( Ι ) Fig.3 DC current gain vs.collector current ( ΙΙ )
characteristics
−1000
−500
Ta=25°C
−200
−100
−50
IC/IB=80
−20
40
−10
20
−5
−2
−1
−10m −20m −50m −100m −200m −500m −1 −2 −5 −10 −20
COLLECTOR CURRENT : IC (A)
Fig.4 Collector-emitter saturation voltage
vs. collector current ( Ι )
−1000 IC/IB=80
−500
−200
−100
−50
Ta= −55°C
−20
25°C
−10
150°C
−5
−2
−1
−20m −50m −100m −200m −500m −1 −2 −5 −10 −20
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
−10
−5
Ta=−55°C
−2
25°C
−1
150°C
−500m
IC/IB=80
−200m
−100m
−50m
−20m
−10m
−20m −50m −100m −200m −500m −1 −2 −5 −10 −20
COLLECTOR CURRENT : IC (A)
Fig.6 Base-emitter saturation voltage
vs. collector current
1000
Ta=25°C
500
f=50MHz
VCE= −5V
200
100
50
20
10
5
5m 10m 20m
50m 100m 200m 500m 1 2
5 10
EMITTER CURRENT : IE (A)
Fig.7 Gain bandwidth product
vs. emitter current
10000
Ta=25°C
5000
f=1MHz
IE=0A
2000
1000
500
200
100
50
20
10
−0.05 −0.1 −0.2
−0.5 −1 −2
−5 −10 −20 −50
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Collector output capacitance
vs. collector-base voltage
10000
Ta=25°C
5000
f=1MHz
IC=0A
2000
1000
500
200
100
50
20
10
−0.05 −0.1 −0.2
−0.5 −1 −2
−5 −10 −20 −50
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Emitter input capacitance
vs. emitter-base voltage
Rev.A
2/3